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RJP63K2 TO-263 High Speed IGBT SMD

Specification	Details
Transistor Type	N-Channel IGBT
Voltage Rating (Vce)	630V
Current Rating (Ic)	35A (at 25°C)
Saturation Voltage (VCE(sat))	1.9V (Typical)
Switching Speed (tr / tf)	60 ns / 200 ns (Typical)
Package Type	TO-263 (SMD / D2PAK)
Technology	Trench Gate & Thin Wafer (G6H-II)

Price

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₹ 110.17

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Barcode: 10302

Product Description

The RJP63K2 is designed for applications where efficiency and speed are paramount. Its low collector-to-emitter saturation voltage (1.9V) significantly reduces power dissipation during the "on" state, while the fast rise and fall times allow for high-frequency operation with minimal switching losses. This combination makes it a robust choice for heavy-duty environments. The TO-263 package provides a large metallic tab for soldering directly to a PCB copper plane, acting as an integrated heat sink for superior thermal performance.

Key Features

High-Speed Switching: Optimized for fast transitions, making it ideal for high-frequency PWM applications.
Advanced Trench Technology: Ensures a uniform current flow and high ruggedness against voltage spikes.
Low Leakage Current: Maintains a maximum leakage (Ices) of only 1 µA, improving overall system standby efficiency.
SMD Form Factor: The TO-263 design supports automated SMT assembly lines, reducing production costs.
High Input Impedance: Features a voltage-driven gate, simplifying the design of driver circuits compared to traditional bipolar transistors.

Technical Details

Gate Charge (Qg): Optimized for low drive current requirements.
Thermal Resistance: Low junction-to-case thermal resistance for improved longevity.
Reliability: Built to withstand high-temperature operating environments up to 150°C

Prototyping and Engineering Tips from Robogears

Thermal Dissipation: Since the TO-263 is an SMD component, the PCB copper area acts as your primary heat sink. Ensure you have a large copper pour (and ideally thermal vias to the bottom layer) connected to the collector tab to prevent the IGBT from de-soldering itself under high loads.
Gate Driving: To achieve the rated 60ns rise time, use a dedicated IGBT gate driver IC capable of providing sufficient peak current to charge the gate capacitance rapidly. Avoid driving directly from a low-current microcontroller pin for high-power switching.
Voltage Headroom: While rated at 630V, always account for inductive spikes (L di/dt) during turn-off. In motor control or SMPS applications, use a snubber circuit or ensure your working voltage stays safely below the breakdown limit to avoid catastrophic failure.
Samsung/LG TV Repair: This specific IGBT is frequently used in the sustain boards of Plasma TVs. If you are replacing a blown RJP63K2, always check the gate resistor and the driving optocoupler/IC, as a failed IGBT often damages its driver circuitry.