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5N90 N Channel MOSFET Transistor

Specification	Details
Drain-Source Voltage ($V_{DS}$)	900V
Continuous Drain Current ($I_D$)	5.0 Amperes
Pulsed Drain Current ($I_{DM}$)	20 Amperes
Gate-Source Voltage ($V_{GS}$)	±30V
Static Drain-Source On-Resistance ($R_{DS(on)}$)	~2.3 Ω
Package Type	TO-220 / TO-220F

Price

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₹ 33.90

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Barcode: 5478961

Product Description

The 5N90 N-Channel MOSFET is a high-voltage power transistor designed specifically for demanding switching applications. With an impressive 900V drain-source breakdown voltage, this MOSFET is an ideal choice for high-efficiency Switch Mode Power Supplies (SMPS), electronic ballasts, and DC-to-DC converters operating on high-voltage rails. Its N-channel enhancement mode design allows for fast switching speeds and low gate charge, reducing power losses during high-frequency operation. The 5N90 is typically housed in a TO-220 package, providing a balance between compact size and effective thermal management when paired with an appropriate heat sink.

Key Features

Extreme Voltage Capability: The 900V rating provides a significant safety margin for 230V AC mains rectification and industrial power applications.
Fast Switching Performance: Optimized for high-frequency PWM (Pulse Width Modulation) circuits, minimizing switching energy loss.
Low Gate Charge: Requires minimal current from the driver circuit to toggle the gate, allowing for simpler gate-drive designs.
Avalanche Ruggedness: Fully characterized for unclamped inductive switching (UIS), ensuring reliability against voltage spikes from inductive loads.
Industry Standard Package: The TO-220 form factor ensures compatibility with a wide range of off-the-shelf heat sinks and PCB layouts.

Technical Details

Total Power Dissipation ($P_D$): ~140W (at $T_C = 25^\circ C$).
Threshold Voltage ($V_{GS(th)}$): 3.0V to 5.0V.
Operating Junction Temperature: -55°C to +150°C.

Prototyping and Engineering Tips from Robogears

Thermal Management is Key: CRITICAL: While rated for 5A, the RDS(on) of 2.3 ohms means that at 2A, the MOSFET will dissipate nearly 9W of heat (I2×R). Always use a substantial aluminum heat sink and thermal paste if your continuous load exceeds 1 Ampere.
Gate Protection: MOSFET gates are extremely sensitive to static electricity and voltage spikes. We recommend placing a 10k ohm resistor between the Gate and Source to ensure the MOSFET stays OFF when the control signal is floating, and a 10-47 ohm resistor in series with the gate to prevent high-frequency oscillations.
High-Voltage Safety: Since this MOSFET is often used in 900V environments, ensure your PCB trace clearance (creepage distance) is at least 3-5mm between high-voltage traces to prevent electrical arcing.
Driving the Gate: To fully "turn on" the 5N90 and achieve the lowest resistance, ensure your gate signal is between 10V and 12V. Driving it directly from a 5V Arduino pin will likely keep it in the "linear region," causing it to overheat instantly under load. Use a MOSFET driver or a transistor-based level shifter.
Inductive Loads: If using this to switch a high-voltage transformer or motor, ensure a "Freewheeling" or "Flyback" diode is used to protect the Drain-Source junction from the massive inductive kickback voltage when the MOSFET turns off.

Package Includes

1 x 5N90 N-Channel MOSFET Transistor

Disclaimer: This component is designed for high-voltage applications. Working with voltages above 50V can be lethal. Ensure all safety protocols are followed and the power source is disconnected before handling. Do not exceed the maximum rated voltage or current. Always verify the pinout (Gate-Drain-Source) using the manufacturer's datasheet before soldering.